I used to be looking through the world wide web but couldn't come across any information and facts make clear how minimal threshold voltage is rapid but consume much more energy And just how significant threshold voltage is sluggish but consumes reduced ability.
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You could modify the described parameters, and compare it that has a "good" end result which takes 2 hours siumlation time. Based upon your requirements, you may speed up the simulation time.
So can somebody make sure you reveal how FET with small threshold voltage has higher velocity and better leakage recent even though FET with significant threshold will be gradual but small on ability?
I happen to be trying to simulate a variable twin polarity energy source method to filter sound and distortions to work popularsongs as a power source to my ADC.
That means I really have to simulate the circuit a great deal of instances to receive the outcomes but The problem is that every simulation takes about two hrs and just will make the perform incredibly gradual.
知乎，让每一次点击都充满意义 —— popular_songs 欢迎来到知乎，发现问题背后的世界。
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The condition is for my investigate I really popular songs need to do things such as sweep voltage, frequency, load resistance and so forth. to analyse their effect on the output
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T How to produce the sub energy area and best energy area utilizing same vss vdd Started off by themanh246